Deep-submicrometer DC-to-RF SOI MOSFET macro-model

We present a submicrometer RF fully depleted SOI MOSFET macro-model based o n a complete extrinsic small-signal equivalent circuit and an improved CAD model for the intrinsic device. The delay propagation effects in the channe l are modeled by splitting the intrinsic transistor into a series of shorte r transistors, for each of which a quasistatic device model can be used. Si nce the intrinsic device model is charge-based, our RF SOI MOSFET model can be used in both small and large-signal analyses. The model has been valida ted for frequencies up to 40 GHz and effective channel lengths down to 0.16 mum.