Evaluation of high dose, high energy boron implantation into Cz substratesfor epi-replacement in CMOS technology

We implanted high energy boron to create a heavily doped ground plane in Cz wafers in order to replace p/p(+) episubstrates in deep submicron compleme ntary metal-oxide semiconductor (CMOS) technology. Devices manufactured on Cz wafers with a 1.5 or 1.6 MeV, I X 10(15) cm(-2) boron implanted ground p lane have superior latch-up immunity as compared to devices on epiwafers. I mprovements in latch-up suppression were observed for all isolation spacing s. Diode leakage was lower in high dose buried-layer substrates than in epi substrates, while gate oxide integrity was equivalent. For the first time, buried layer substrates have been shown to duplicate or exceed the performa nce of episilicon simultaneously for all relevant CMOS transistor and circu it parameters.