Analysis of buried gate MESFET under dark and illumination

D. C. analysis has been carried out for a buried-gate GaAs metal semiconduc tor field effect transistor (MESFET) under dark and front illumination. The photovoltage I-V characteristics and the transconductance of the device ha ve been evaluated. The results indicate very good performance of the device compared to other devices like MESFET under back illumination and MESFET w ith front illumination having surface gate. Thus, buried-gate optical field effect transistor (OPFET) will be highly suitable for optical communicatio n and optical computing.