D. C. analysis has been carried out for a buried-gate GaAs metal semiconduc
tor field effect transistor (MESFET) under dark and front illumination. The
photovoltage I-V characteristics and the transconductance of the device ha
ve been evaluated. The results indicate very good performance of the device
compared to other devices like MESFET under back illumination and MESFET w
ith front illumination having surface gate. Thus, buried-gate optical field
effect transistor (OPFET) will be highly suitable for optical communicatio
n and optical computing.