Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

We have fabricated Ni Schottky rectifiers on 2.7 X 10(16) cm(-3) n-type 6H- SiC epilayer using an effective edge termination based on an oxide ramp pro file around the Schottky contact. Several anneals of the Schottky contacts were experimented. In particular, the diodes annealed at 900 degreesC showe d excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics follow the thermionic emission theory with t he ideality factor close to one at low biases. An accurate analytical model and complete parameter extraction of the forward characteristics of the Ni /6H-SiC Schottky barrier diodes (SBDs) for low and high-level current densi ties are presented. The model takes into account the high-level injection e ffects and the current dependence of the series resistance. Direct extracti on of the SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm(2) is obtained.