Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

We developed an analytical device model for lateral p-n junction vertical-c avity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transp ort, and recombination in LJVCSELs as well as the features of the photon pr opagation in the cavity. This model is used for the calculation and analysi s of the LJVCSEL steady-state characteristics. It is shown that the localiz ation of the injected electrons primarily near the p-n junction and the rea bsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-curren t characteristics. The reincarnation of electrons and holes due to the reab sorption of lateral propagating photons can substantially decrease the thre shold current. (C) 2001 American Institute of Physics.