Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer

The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111) -Ti-SiO2-Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range f rom ultraviolet to far infrared. In fitting the dielectric functions of LaN iO3, two harmonic oscillators are observed, one is believed to come from th e valence-conduction interband transition and the other is attributed to th e transition from a donor band to the conduction. Simultaneously the freque ncy of plasmon is also obtained, which results from the strong electron-ele ctron interaction. Based on these optical and electrical properties, a prom ising application of LaNiO3 thin films in infrared microsensors has been pr oposed. (C) 2001 American Institute of Physics.