Xz. Liao et al., Extracting composition and alloying information of coherent Ge(Si)/Si(001)islands from [001] on-zone bright-field diffraction contrast images, J APPL PHYS, 90(6), 2001, pp. 2725-2729
Ge(Si)/Si(001) coherent islands grown at 700 degreesC by molecular beam epi
taxy were investigated using transmission electron microscopy. [001] on-zon
e bright-field diffraction contrast imaging and image simulation techniques
were used to investigate the structure of these coherent islands. Comparis
on of simulated and experimental images indicates nonuniform composition di
stribution within the coherent islands when the islands were grown at high
temperatures (700 degreesC), but uniform composition for growth at lower te
mperatures (600 degreesC). (C) 2001 American Institute of Physics.