Extracting composition and alloying information of coherent Ge(Si)/Si(001)islands from [001] on-zone bright-field diffraction contrast images

Citation
Xz. Liao et al., Extracting composition and alloying information of coherent Ge(Si)/Si(001)islands from [001] on-zone bright-field diffraction contrast images, J APPL PHYS, 90(6), 2001, pp. 2725-2729
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
6
Year of publication
2001
Pages
2725 - 2729
Database
ISI
SICI code
0021-8979(20010915)90:6<2725:ECAAIO>2.0.ZU;2-S
Abstract
Ge(Si)/Si(001) coherent islands grown at 700 degreesC by molecular beam epi taxy were investigated using transmission electron microscopy. [001] on-zon e bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands. Comparis on of simulated and experimental images indicates nonuniform composition di stribution within the coherent islands when the islands were grown at high temperatures (700 degreesC), but uniform composition for growth at lower te mperatures (600 degreesC). (C) 2001 American Institute of Physics.