Monte Carlo based analysis of intermodulation distortion behavior in GaN-AlxGa1-xN high electron mobility transistors for microwave applications

Monte Carlo based calculations of the large-signal nonlinear response chara cteristics of GaN-AlxGa1-xN high electron mobility transistors with particu lar emphasis on intermodulation distortion (IMD) have been performed. The n onlinear electrical transport is treated on first principles, all scatterin g mechanisms included, and both memory and distributed effects built into t he model. The results demonstrate an optimal operating point for low IMD at reasonably large output power due to a minima in the IMD curve. Dependence of the nonlinear characteristics on the barrier mole fraction x is also de monstrated and analyzed. Finally, high-temperature predictions of the IMD h ave been made by carrying out the simulations at 600 K. An increase in dyna mic range with temperature is predicted, due to a relative suppression of i nterface roughness scattering. (C) 2001 American Institute of Physics.