Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

Photoluminescence experiments were performed as a function of temperature a nd excitation intensity in order to investigate the optical properties of I n0.1Ga0.9As/GaAs quantum wells grown on vicinal GaAs(001) substrates with d ifferent miscut angles. The misorientation of the surface played an importa nt role and influenced the intensity, efficiency, energy, and full width at half maximum of the optical emission, as well as the segregation of indium atoms. It is shown that at high temperature the optical properties of InGa As quantum wells grown on vicinal substrates are slightly inferior to ones of the same structure grown a nominal surface because of the faster escape of the carriers. (C) 2001 American Institute of Physics.