Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection

Hole-induced bulk and interface defect generation and breakdown in ultrathi n silicon dioxide (2.0 and 3.0 nm) are studied using substrate hot-hole inj ection. The results show that although these substrate hot holes are effect ive in creating electrically active damage in the dielectrics, these defect s are very ineffective in causing breakdown as compared to those defects cr eated by constant voltage tunneling stress. Identical to hole trapping in t hicker oxides, substrate hot-hole defect generation was independent of elec tric field, decreased with decreasing thickness, and increased with decreas ing temperature. The defect generation and breakdown of ultrathin oxides by substrate hot-hole stress is significantly different from that observed fo r constant voltage tunneling stress. The results suggest that the degradati on and breakdown of ultrathin silicon dioxide cannot be explained by the tr apping of hot holes alone.