Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge

An averaging procedure is applied to inelastic acoustic-phonon scattering w hich leads to lattice-temperature-dependent constants for the phonon energy and the square of the phonon wave vector. The resulting scattering rate de pends on energy only thus facilitating the search of after-scattering state s in full-band Monte Carlo simulations. The model still accurately reproduc es the velocity-field characteristics over a wide range of lattice temperat ures, but in silicon the hot-hole tail of the energy distribution is strong ly enhanced compared with the elastic equipartition approximation. (C) 2001 American Institute of Physics.