Photoionization profiles of helium autoionizing states in external DC electric fields

Authors
Citation
Yk. Ho et Tk. Fang, Photoionization profiles of helium autoionizing states in external DC electric fields, J CHIN CHEM, 48(3), 2001, pp. 539-544
Citations number
18
Categorie Soggetti
Chemistry
Journal title
JOURNAL OF THE CHINESE CHEMICAL SOCIETY
ISSN journal
00094536 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
539 - 544
Database
ISI
SICI code
0009-4536(200106)48:3<539:PPOHAS>2.0.ZU;2-1
Abstract
Electric-field effects on the doubly excited resonant structures in He grou nd state photoionization are investigated theoretically using the complex-r otation method with a B-spline-based configuration interaction (BSCI) basis . The variations of the structure profiles for the M-L = 0 components of He (2,2a), (2,3a), and (2,4a) P-1(o) and D-1(e) resonance pairs for selected DC electric field strengths are examined. The changes of the resonant energ ies, widths, Fano q-parameters, and background cross sections, are also pre sented.