Ferroelectric SBN thin films grown by an SBN/Bi2O3 PLD sequential process

Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by pulsed laser dep osition (PLD) on Pt/Ti/SiO2/Si(100) using a sequential deposition process f rom two SBN and Bi2O3 targets. This route allows for bismuth enrichment of the film composition in order to improve the ferroelectric characteristics. Structural and microstructural characterizations were performed by X-ray d iffraction (XRD) and scanning electron microscopy SEM). The composition of films and targets was determined by energy dispersive X-ray spectrometry ED X). The deposition temperature, which provided well-crystallized. layered p erovskite SBN phase films in situ, was found to be 700 degreesC. The result s were compared with those obtained for SBN films deposited at 400 degreesC and then crystallized ex situ. For an ex situ annealing temperature of 750 degreesC, a remanent polarization value (Pr) of 23.2 muc/cm(2) and a coerc ive field (Ec) of 112 kV/cm were measured. (C) 2001 Elsevier Science Ltd. A ll rights reserved.