Focusing of low energy electrons by submicrometer patterned structures in low energy electron microscopy

Citation
Hc. Kan et Rj. Phaneuf, Focusing of low energy electrons by submicrometer patterned structures in low energy electron microscopy, J VAC SCI B, 19(4), 2001, pp. 1158-1163
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1158 - 1163
Database
ISI
SICI code
1071-1023(200107/08)19:4<1158:FOLEEB>2.0.ZU;2-2
Abstract
We report the observation of focusing of low energy electrons by submicrome ter pits patterned onto a silicon crystal surface. Images of an array of pi ts obtained with a low energy electron microscope consist of an array of br ight spots whose diameters depend strongly on the energy of the incident el ectrons. Our electron-optical simulation shows that each pit acts like an e lectrostatic lens, focusing the electrons along its optical axis, with a fo cal position which indeed depends strongly on the incident energy. (C) 2001 American Vacuum Society.