Sd. Kim et al., Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide, J VAC SCI B, 19(4), 2001, pp. 1195-1200
We studied the effects of Ge preamorphization (PAM) and Ti deposition metho
d on 0.25 mum Ti-salicide junctions in comparison with As PAM. For each PAM
scheme, ion implantations are performed at 2E14 ion/cm(2) dose and 20 keV
energy using As-75 and GeF4 ion sources. Ionized physical vapor deposition
and collimated type dc-magnetron sputtering are used for depositing similar
to 300 Angstrom Ti for this study. Ge PAM showed lower sheet resistance (s
imilar to 48 Omega /sq.) and better within-wafer uniformity than As PAM at
0.25 mum line width of n+ /p-well junctions. This is attributed to enhanced
C54-silicidation at n + junction. At p+ junctions, comparable performance
in sheet-resistance reduction at fines lines for both As and Ge PAM schemes
. Junction leakage current (JLC) levels are below similar to 1E14 A/mum(2)
at area patterns for all process conditions, whereas no degradation in JLC
are shown under Ge PAM condition even at edge-intensive patterns. Junction
breakdown voltage and contact resistances are satisfactory at all process c
onditions. (C) 2001 American Vacuum Society.