Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide

Citation
Sd. Kim et al., Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide, J VAC SCI B, 19(4), 2001, pp. 1195-1200
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1195 - 1200
Database
ISI
SICI code
1071-1023(200107/08)19:4<1195:EOTSSA>2.0.ZU;2-7
Abstract
We studied the effects of Ge preamorphization (PAM) and Ti deposition metho d on 0.25 mum Ti-salicide junctions in comparison with As PAM. For each PAM scheme, ion implantations are performed at 2E14 ion/cm(2) dose and 20 keV energy using As-75 and GeF4 ion sources. Ionized physical vapor deposition and collimated type dc-magnetron sputtering are used for depositing similar to 300 Angstrom Ti for this study. Ge PAM showed lower sheet resistance (s imilar to 48 Omega /sq.) and better within-wafer uniformity than As PAM at 0.25 mum line width of n+ /p-well junctions. This is attributed to enhanced C54-silicidation at n + junction. At p+ junctions, comparable performance in sheet-resistance reduction at fines lines for both As and Ge PAM schemes . Junction leakage current (JLC) levels are below similar to 1E14 A/mum(2) at area patterns for all process conditions, whereas no degradation in JLC are shown under Ge PAM condition even at edge-intensive patterns. Junction breakdown voltage and contact resistances are satisfactory at all process c onditions. (C) 2001 American Vacuum Society.