Applications of micropinch x-ray source

Citation
Og. Semyonov et al., Applications of micropinch x-ray source, J VAC SCI B, 19(4), 2001, pp. 1235-1240
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1235 - 1240
Database
ISI
SICI code
1071-1023(200107/08)19:4<1235:AOMXS>2.0.ZU;2-9
Abstract
An experimental model of a micropinch (vacuum spark) x-ray source was teste d in x-ray lithography and x-ray microscopy applications. The image resolut ion for the proximity lithography and microscopy methods with the micropinc h source was estimated. The proximity lithography with positive and negativ e resists was tested in vacuum; a protection system, shielding a mask from the discharge plasma blowoff, metallic debris, and extreme ultraviolet (EUV ) radiation, was installed in front of the mask. Images of the biological s pecimens were also obtained with x-ray resists for one-pulse exposure and a series of pulses. The effect of microrelief leveling (polishing) of the so lid surfaces irradiated by the high-power pulsed soft x-ray/EUV flux was ob served experimentally, and an analytical model of the effect was suggested. The effect of structural modification of the thin layers irradiated by the high power EUV flux was predicted, and the transformation of the dielectri c buffer layers from the amorphous to the crystalline state was realized ex perimentally. (C) 2001 American Vacuum Society.