Faceting transition in epitaxial growth of dilute GaNAs films on GaAs

Authors
Adamcyk, M Tixier, S Ruck, BJ Schmid, JH Tiedje, T Fink, V Jeffries, M Karaiskaj, D Kavanagh, KL Thewalt, M
Citation
M. Adamcyk et al., Faceting transition in epitaxial growth of dilute GaNAs films on GaAs, J VAC SCI B, 19(4), 2001, pp. 1417-1421
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1417 - 1421
Database
ISI
SICI code
1071-1023(200107/08)19:4<1417:FTIEGO>2.0.ZU;2-X
Abstract
An abrupt transition to a {111} faceted growth mode is observed in molecula r-beam-epitaxy growth of dilute GaNxAs1-x (x < 0.05) films on (100) GaAs su bstrates. The faceted growth mode is favored by high growth temperatures, h igh nitrogen content, and high arsenic flux. The best electronic quality ma terial, as measured by low-temperature photoluminescence. was obtained at h igh growth temperatures and high arsenic flux without exceeding the thresho ld for facet formation. The nitrogen content was found to be insensitive to the arsenic flux. (C) 2001 American Vacuum Society.