Growth and characterization of GaInNAs/GaAs multiquantum wells

Thick GaAsN layers and GaInNA/GaAs multiple quantum wells (MQWs) were succe ssfully grown on semi-insulating GaAs substrates by gas-source molecular be am epitaxy equipped with a nitrogen radio frequency (rf) activated plasma s ource. High resolution x-ray rocking curves indicate that the nitrogen cont ent in the GaAsN layer is increased from 0.7% to 3% with increasing rf cavi ty pressure. Room temperature photoluminescence measurements show that the emission wavelength decreases when the nitrogen content is increased. The e volution of the strained band gap with nitrogen composition is in quantitat ive agreement with calculations as well as with other spectroscopic studies , allowing complete characterization of the alloy for a small nitrogen frac tion. Furthermore, the influence of the growth temperature and the V-III ra tio on the optical and structural properties of the GaInNAs MQWs has been c arefully examined. We found that the material properties are optimal at a g rowth temperature of 400 degreesC and a V-III ratio of 3. (C) 2001 American Vacuum Society.