Molecular-beam-epitaxy growth and luminescence properties of Nd3+-doped LaF3/CaF2 thin films

Nd3+-doped LaF3 heteroepitaxial waveguide films on two oriented CaF2 substr ates were grown by the molecular-beam-epitaxy method. The spectroscopic pro perties of Nd3+ in the epitaxial films have been studied by using a tunable Ti:sapphire laser. Efficient IR emissions have been detected at 1.06, 0.86 , and 1.32 nm ranges. The influences of substrate orientation, Nd3+ concent ration, and temperature on the luminescence properties were investigated. B y using a prism-coupling technique, waveguided luminescence has been measur ed at room temperature. Further-more, laser emission at 1.06 Am was obtaine d at room temperature with a 790 nm laser pump. (C) 2001 American Vacuum So ciety.