Formation and photoluminescence of stacked CdSe quantum dots grown by molecular beam epitaxy

Citation
Y. Murase et al., Formation and photoluminescence of stacked CdSe quantum dots grown by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1459-1462
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1459 - 1462
Database
ISI
SICI code
1071-1023(200107/08)19:4<1459:FAPOSC>2.0.ZU;2-Q
Abstract
We have investigated formation and optical properties of single-layer and s tacked self-assembled CdSe quantum dots (QDs) by reflection high-energy ele ctron diffraction (RHEED), plan-view transmission electron microscope (TEM) image, and photoluminescence (PQ spectra. We have demonstrated a useful te chnique to control the dot size using the RHEED intensity observation durin g CdSe growth. The RHEED intensity significantly changes with the increase of CdSe coverage. The TEM observation reveals that the dot structures are f ormed at the minimum of the RHEED intensity variation. Using this technique , we have fabricated stacked QDs. The excitation power dependence of the PL spectra indicates the vertically coupling effect on thin ZnSe spacer sampl es. (C) 2001 American Vacuum Society.