Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)

The appearance of InAs quantum-wire-like morphology on an AlInAs buffer lay er grown by molecular-beam epitaxy on nominal InP(001) surfaces is investig ated. Lateral composition modulation in the AlInAs buffer layer is suggeste d to play an important role in the formation of InAs nanowires. For InAs/Al InAs nanowire superlattices. the InAs nanowires are laterally correlated wi th respect to growth directions. By changing the spacer thickness, no evide nce of vertical correlation is observed. The lack of vertical correlation i s ascribed to the asymmetrical cross-sectional shape of the nanowires. (C) 2001 American Vacuum Society.