Molecular beam epitaxy growth and characterization of ZnTe : Cr2+ layers on GaAs(100)

Authors
Sadofyev, YG Pevtsov, VF Dianov, EM Trubenko, PA Korshkov, MV
Citation
Yg. Sadofyev et al., Molecular beam epitaxy growth and characterization of ZnTe : Cr2+ layers on GaAs(100), J VAC SCI B, 19(4), 2001, pp. 1483-1487
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1483 - 1487
Database
ISI
SICI code
1071-1023(200107/08)19:4<1483:MBEGAC>2.0.ZU;2-T
Abstract
The chromium-doped ZnTe layers were grown by molecular beam epitaxy technol ogy on the GaAs substrates. The metallic chromium was used as a dopant. The characteristic emission of the Cr2+ ions that is incorporated into ZnTe ep ilayers was obtained. However, the attempt of doping by CrI3 has shown that the halides induce a deterioration of the surface morphology and are ineff icient dopants for II-VI semiconductors. (C) 2001 American Vacuum Society.