Photoluminescence from ZnTe : Yb films grown on (100) GaAs by molecular beam epitaxy

Authors
Sadofyev, YG Konnov, VM Loiko, NN Gippius, AA
Citation
Yg. Sadofyev et al., Photoluminescence from ZnTe : Yb films grown on (100) GaAs by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1492-1496
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
1492 - 1496
Database
ISI
SICI code
1071-1023(200107/08)19:4<1492:PFZ:YF>2.0.ZU;2-9
Abstract
Yb-doped ZnTe layers grown on GaAs substrates have been obtained using mole cular beam epitaxy. A study of photoluminescence of ZnTe:Yb/GaAs structures is performed. It is demonstrated that Yb can be rendered optically active in ZnTe if it is incorporated in three-component complexes which consist of ytterbium, oxygen, and some of background impurities. (C) 2001 American Va cuum Society.