Electrical properties and Raman spectra of undoped and Al-doped ZnO thin films by metalorganic vapor phase epitaxy

Authors
Zhang, ZC Huang, BB Yu, YQ Cui, DL
Citation
Zc. Zhang et al., Electrical properties and Raman spectra of undoped and Al-doped ZnO thin films by metalorganic vapor phase epitaxy, MAT SCI E B, 86(2), 2001, pp. 109-112
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
86
Issue
2
Year of publication
2001
Pages
109 - 112
Database
ISI
SICI code
0921-5107(20010925)86:2<109:EPARSO>2.0.ZU;2-9
Abstract
Undoped and Al-doped ZnO thin films have been deposited on Si substrates us ing metalorganic vapor phase epitaxy at atmospheric pressure. The as-deposi ted ZnO films showed good crystalline character and exhibited (002) orienta tion with the c axis perpendicular to the substrate surface. The carrier co ncentration of ZnO films was found to be dependent upon the doping of Al, a nd varied in the range from 10(19) to 10(20) cm(-3). The resistivity of ZnO films was in the order of magnitude of 10(-3) Omega cm. The Hall mobility decreased with the doping of Al and was in the range 5-53 cm(2) (V(.)s)(-1) . Raman spectra indicated the observed A(1)(LO) and E-2(high) bands shifted towards the low-frequency side. (C) 2001 Elsevier Science B.V. All rights reserved.