The upper limit to the power at which trap detectors have a linear response
was recently measured. We have complemented these measurements by testing
traps with an applied bias voltage at several visible wavelengths. We used
Hamamatsu S1337-1010 silicon photodiodes, and also briefly tested the S5227
-1010 photodiode. Application of a bias voltage increases the linearity lim
it by a factor of more than 10 for very narrow beams and of more than 30 fo
r wide beams. No irreversible changes were detected even for the highest ir
radiance measured (33 W/cm(2) at 406 nm). The minimum bias voltages require
d for linearities of 99 %, 99.8 % and 99.95 % are presented for several bea
m sizes.