10 GHz GaAs monolithic twin-dipole antenna FET mixer

The first fully monolithic X-band twin-dipole antenna mixer consisting of a uniplanar twin-dipole antenna and a GaAs MESFET single-gate mixer on the s ame GaAs substrate fabricated by monolithic microwave integrated-circuit te chnology (MMIC) is reported. The total chip size is 5 X 5 mm(2). This circu it received an RF signal of 10 GHz, and down-converted it to an IF signal o f I GHz with a conversion loss of 22 dB. The experimental results demonstra te that this topology has potential applications for future low-cost millim eter-wave receivers for smart munitions seekers and automobile-collision-av oidance radars. (C) 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 436-438, 2001.