Binding energy of shallow impurities in a polar quantum well wire

Citation
M. Bouhassoune et al., Binding energy of shallow impurities in a polar quantum well wire, PHYSICA B, 304(1-4), 2001, pp. 389-397
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
304
Issue
1-4
Year of publication
2001
Pages
389 - 397
Database
ISI
SICI code
0921-4526(200109)304:1-4<389:BEOSII>2.0.ZU;2-E
Abstract
The binding energy of an on-center donor impurity in cylindrical quantum we ll wire is investigated, The calculation is made within the effective mass approximation and using a variational approach. The electronic confinement was modeled by a finite deep potential well. The interaction of the charge carriers (electron and ion) with both the confined LO and SO phonons has be en considered. Our results show that the binding energy and the electron ef fective mass depend on the size of the wire, the height of the potential ba rrier and the polaronic corrections. Furthermore, for a thin wire the bindi ng energy depends also on the variation of the electron effective mass at t he edge of the wire. (C) 2001 Elsevier Science B.V. All rights reserved.