Buckling and band gap of the Ge(111)2 X 1 surface studied by low-temperature scanning tunneling microscopy - art. no. 081306

Citation
Rm. Feenstra et al., Buckling and band gap of the Ge(111)2 X 1 surface studied by low-temperature scanning tunneling microscopy - art. no. 081306, PHYS REV B, 6408(8), 2001, pp. 1306
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6408
Issue
8
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010815)6408:8<1306:BABGOT>2.0.ZU;2-8
Abstract
Low-temperature scanning tunneling microscopy is used to study the 2 x 1 re construction of cleaved Ge(111) surfaces. Buckling of the surface atoms is investigated by observations of the corrugation shift between filled and em pty states. In the <2<(1)over bar>(1) over bar> direction, the shift in cor rugation maxima from filled to empty states is found to be negative, consis tent with expectations for the "negatively buckled" model for this surface. A surface band gap of 0.54 +/- 0.04 eV is measured by tunneling spectrosco py.