Influence of a magnetic field on an exciton bound to an ionized donor impurity in GaAs/Ga1-xAlxAs and CdTe/Cd1-xZnxTe semiconductor quantum wells - art. no. 085304

Authors
Stebe, B Essaoudi, I Ainane, A Saber, M
Citation
B. Stebe et al., Influence of a magnetic field on an exciton bound to an ionized donor impurity in GaAs/Ga1-xAlxAs and CdTe/Cd1-xZnxTe semiconductor quantum wells - art. no. 085304, PHYS REV B, 6408(8), 2001, pp. 5304
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6408
Issue
8
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010815)6408:8<5304:IOAMFO>2.0.ZU;2-U
Abstract
The influence of an external uniform magnetic field applied along the growt h axis on the ground-state energy of an exciton bound to an ionized donor i mpurity in a semiconductor quantum well with finite potential barriers is i nvestigated. The binding energy of the complex is calculated variationally within the envelope-function approximation as a function of the well width for arbitrary intensity of the field. The results show that the magnetic fi eld enhances the correlation energy of the complex in the cases of GaAs/Ga1 -xAlxAs and the CdTe/Cd1-xZnxTe quantum wells. The influence of the magneti c field and the quantum confinement on the stability against dissociation i s also discussed.