Profiling of electron accumulation layers in the near-surface region of InAs (110) - art. no. 085311

High-resolution electron energy-loss spectroscopy (HREELS) has been used to study the surface-plasmon excitations in degenerate n-type InAs (110) surf aces prepared by atomic hydrogen cleaning (AHC), and a range of different a rgon-ion bombardment and annealing ([BA) procedures. Using semiclassical di electric theory simulations of the HREEL spectra, and modified Thomas-Fermi approximation charge profile calculations, the dependence of the bulk carr ier concentration, accumulation layer profile, plasmon lifetime, carrier mo bility, and spatial dispersion on the IBA conditions, was determined. The r esults from the IBA surfaces were compared with those from damage-free surf aces prepared by AHC. The density of created defects increased both as a fu nction of the bombardment angle when varied from grazing to normal incidenc e for 500 eV IBA, and when the bombardment energy was increased from 500 to 1500 eV. The band bending and the potential-well widths used to simulate t hese data, were found to be dependent upon the bombardment energy. However, these parameters changed proportionally, resulting in the surface-state de nsity remaining independent of the surface preparation method.