Infrared absorption in Si/Si1-xGex/Si quantum wells - art. no. 085329

The infrared intersubband optical transitions in SiGe/Si quantum wells is t heoretically examined. We have used the 8 x 8, 12 x 12, and 14 x 14 k. p Ha miltonians taking into account both the p-like first conduction band and th e s-like second conduction band to calculate wave functions and energy disp ersion of the valence band of Si/Si0.8Ge0.2/Si quantum wells. We discuss in tersubband absorption in the valence band and we show that the p-p interact ion favors intersubband transitions for an optical polarization parallel to the layer plane (x polarization). For z polarization, both s-p and p-p int eractions play the same footing role in intervalence band transitions.