Atomic structure of diamond {111} surfaces etched in oxygen water vapor - art. no. 085403

Citation
Fk. De Theije et al., Atomic structure of diamond {111} surfaces etched in oxygen water vapor - art. no. 085403, PHYS REV B, 6408(8), 2001, pp. 5403
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6408
Issue
8
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010815)6408:8<5403:ASOD{S>2.0.ZU;2-5
Abstract
The atomic structure of the {111} diamond face after oxygen-water-vapor etc hing is determined using x-ray scattering. We find that a single dangling b ond diamond {111} surface model, terminated by a full monolayer of -OH fits our data best. To explain the measurements it is necessary to add an order ed water layer on top of the -OH terminated surface. The vertical contracti on of the surface cell and the distance between the oxygen atoms are genera lly in agreement with model calculations and results on similar systems. Th e OH termination is likely to be present during etching as well. This model experimentally confirms the atomic-scale mechanism we proposed previously for this etching system.