Dip problem of the electron mobility on a thin helium film - art. no. 073401

Citation
V. Shikin et al., Dip problem of the electron mobility on a thin helium film - art. no. 073401, PHYS REV B, 6407(7), 2001, pp. 3401
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6407
Issue
7
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010815)6407:7<3401:DPOTEM>2.0.ZU;2-I
Abstract
Electrons floating above liquid helium form an ideal two-dimensional system with an extremely high mobility. However, the mobility can change substant ially when decreasing the thickness of the helium film from bulk to a thin film of a few hundred Angstrom. Furthermore it is observed that for certain film thicknesses there is a pronounced dip in the mobility. We present the oretical investigations and measurements concerning this problem. Taking in to account the roughness of the substrate, which supports the helium film, we find theoretically a discontinuity in the chemical potential of the elec trons which results in a diplike behavior in the electron current and hence in the electron mobility. This scenario is supported by direct measurement s of the electron current on substrates with different roughness and at dif ferent electron densities.