We report a photoemission study on high-quality single-crystal graphite epi
taxially grown on SiC. The results are interpreted using independent inform
ation on the final states obtained by very-low-energy electron diffraction.
Significant intrinsic photoemission and surface effects are identified, wh
ich distort the photoemission response and narrow the observed dispersion r
ange of the pi state. We assess its true dispersion range using a model pho
toemission calculation. A significant dependence of the excited-state self-
energy effects on the wave-function character is found. The experimental re
sults are compared with a GW calculation.