Optical and magneto-optical response of a doped Mott insulator - art. no. 075108

We study the optical, Raman, and ac Hall response of the doped Mott insulat or within the dynamical mean-field theory (d = infinity ) for strongly corr elated electron systems. The occurrence of the isosbectic point in the opti cal conductivity is shown to be associated with the frequency dependence of the generalized charge susceptibility. We compute the Raman response, whic h probes the fluctuations of the "stress tensor," and show that the scatter ing is characterized by appreciable incoherent contributions. The calculate d ac Hall constant and Hall angle also exhibit the isosbectic points. These results are also compared with those obtained for a non-FL metal in d = in finity. The role of low-energy coherence (FL) or incoherence (non-FL) in de termining the finite frequency response of strongly correlated metals in d = infinity is discussed in detail. As an application of interest, we comput e the dielectric figure-of-merit (DFOM), a quantity that is of potential im portance for microwave device applications. We demonstrate explicitly that systems near the filling driven Mott transition might be good candidates in this respect, and discuss the influence of real-life factors on the DFOM.