Optical absorption in random media: Application to Ga1-xMnxAs epilayers - art. no. 075306

Authors
Szczytko, J Bardyszewski, W Twardowski, A
Citation
J. Szczytko et al., Optical absorption in random media: Application to Ga1-xMnxAs epilayers - art. no. 075306, PHYS REV B, 6407(7), 2001, pp. 5306
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6407
Issue
7
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010815)6407:7<5306:OAIRMA>2.0.ZU;2-8
Abstract
A model to calculate the fundamental absorption edge in heavily doped semic onductors is proposed. The model is based on the assumption that the quasim omentum conservation rule in optical transitions is partially released in r andom media. This model is applied to transmission data of Ga1-xMnxAs epila yers. The values obtained for the free hole concentration p = 7 x 10(19) cm (-3), and the p-d exchange integral N(o)beta = - 1 eV reproduce reasonably well the fundamental absorption edge of Ga1-xMnxAs.