Relaxation pathways in InAs/GaAs quantum dots - art. no. 075309

We have investigated individual InAs quantum dots in GaAs using photolumine scence spectroscopy. The dots were grown by the Stranski-Krastanov techniqu e. We find that holes in excited states sometimes recombine with electrons in the ground state. Using power-dependent spectroscopy in conjunction with a rate-equation system to model the intensity behavior, we find that the p resence of holes in excited states is also observable when monitoring the p hotoluminescence between electrons and holes in their single-particle groun d states.