Effects of substrate bias voltage on plasma parameters in temperature control using a grid system

In this paper we investigate the effects of substrate bias voltage on plasm a parameters in temperature control using a grid system in inductively coup led plasma. Electron temperature can be controlled from 2.5 eV to 0.5 eV at 1 mTorr Ar plasma using grid bias voltage, and the electron temperature is a strong function of substrate bias voltage. The main control parameter de termining the electron temperature is the potential difference between grid -biased voltage and the plasma potential in the temperature controlled regi on (Delta phi (II,g)). When substrate bias voltage is negative, plasma para meters do not vary with substrate bias voltage due to constant Delta phi (I I,g) (C) 2001 American Institute of Physics.