MOS ionizing radiation dosimeters: from low to high dose measurement

Authors
Sarrabayrouse, G Polischuk, V
Citation
G. Sarrabayrouse et V. Polischuk, MOS ionizing radiation dosimeters: from low to high dose measurement, RADIAT PH C, 61(3-6), 2001, pp. 511-513
Citations number
1
Categorie Soggetti
Physics
Journal title
RADIATION PHYSICS AND CHEMISTRY
ISSN journal
0969806X → ACNP
Volume
61
Issue
3-6
Year of publication
2001
Pages
511 - 513
Database
ISI
SICI code
0969-806X(200106)61:3-6<511:MIRDFL>2.0.ZU;2-N
Abstract
Metal-oxide-silicon dosimeters with a very thick gate oxide in a stack-conn ected configuration are studied with respect to their capability to measure a low dose. It is shown that if the temperature is controlled to +/-5 degr eesC during reading a dose as low as 10(-4)Gy can be measured with 10% accu racy. (C) 2001 Elsevier Science Ltd. All rights reserved.