Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Authors
Dedman, CJ Roberts, EH Gibson, ST Lewis, BR
Citation
Cj. Dedman et al., Fast 1 kV metal-oxide-semiconductor field-effect transistor switch, REV SCI INS, 72(9), 2001, pp. 3718-3720
Citations number
4
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
72
Issue
9
Year of publication
2001
Pages
3718 - 3720
Database
ISI
SICI code
0034-6748(200109)72:9<3718:F1KMFT>2.0.ZU;2-2
Abstract
A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall ti me of similar to2.5 ns, and has proved a cost-effective means of driving el ectrostatic gating and rereferencing devices in pulsed ion-beam experiments . (C) 2001 American Institute of Physics.