Ammonium phosphate-assisted fabrication of insulating coatings on GaAs andInP

Authors
Mittova, IY Lavrushina, SS Shchukarev, AV Konstantinov, AE Semenov, VN Muratov, AA
Citation
Iy. Mittova et al., Ammonium phosphate-assisted fabrication of insulating coatings on GaAs andInP, RUSS J IN C, 46(8), 2001, pp. 1128-1132
Citations number
16
Categorie Soggetti
Inorganic & Nuclear Chemistry
Journal title
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY
ISSN journal
00360236 → ACNP
Volume
46
Issue
8
Year of publication
2001
Pages
1128 - 1132
Database
ISI
SICI code
0036-0236(200108)46:8<1128:APFOIC>2.0.ZU;2-C
Abstract
Ammonium phosphate-assisted thermal oxidation of GaAs and InP was shown to substantially promote the growth of insulating coatings on these semiconduc tors and to change the growth mechanism. Polyphosphoric acids deposit on ga llium arsenide and indium phosphide and subsequently react with the constit uents of the substrate to produce gallium phosphates (for GaAs) and indium phosphates (for InP).