Multilayer thermionic transport in semiconductor superlattices

Citation
Ag. Mal'Shukov et al., Multilayer thermionic transport in semiconductor superlattices, SOL ST COMM, 119(10-11), 2001, pp. 563-567
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
119
Issue
10-11
Year of publication
2001
Pages
563 - 567
Database
ISI
SICI code
0038-1098(2001)119:10-11<563:MTTISS>2.0.ZU;2-W
Abstract
Using the kinetic equation including multilayer hopping processes, we have investigated theoretically the thermoelectric transport in a semiconductor superlattice, taking into account the effect of charge buildup. Our unified approach, which treats multilayer systems and homogeneous bulk systems on equal footing, demonstrates the important role of carrier mean free path, w hich in most existing works on thermionic emission based on the Richardson current is assumed to be equal to the barrier width. Our numerical results indicate a substantial increase in the figure of merit due to the multilaye r hopping, which does not affect the thermopower significantly as expected. (C) 2001 Elsevier Science Ltd. All rights reserved.