On the anomalous SIMS transient of B in Si: the influence of surface conditions

The SIMS B-11(+) signal from a homogeneously boron-doped silicon sample was measured with a 1 keV O-2(+) beam at 60 degrees incidence without oxygen f looding. Stationary levels of boron secondary ions were reached only at a d epth of similar to 40 nm. Ln vacuo rotation of the analysed samples during interruption of the profiling revealed that there is no relation between th e anomalous long boron transient and the formation of surface ripples by th e ion beam. In contrast, removal of the native oxide by HF prior to the SIM S analysis resulted in a reduction of the boron transient to a normal value of similar to6 nm. This work shows that for accurate dynamic SIMS analysis the initial surface condition can be important. Copyright (C) 2001 John Wi ley & Sons, Ltd.