Dc electrical properties of some chalcogenide glassy alloys of the system Se100-xInx

DC electrical properties of the system Se100-xInx (x = 5, 10, 15, 20 at. %) have been investigated. I-V characteristics of this system are discussed i n terms of the Poole-Frenkel and the Schottky effect. The jump distance (d) , charge carrier concentration (n) and trap depth (phi) have been deduced f or the system. According to the Arrhenius equation of conductivity, the act ivation energy of conduction Delta omega (1) and Delta omega (2) for the tw o arms of conductivity has been found to be in the range of 0.18-1.2 eV. Bo th the mobility (mu) and diffusion coefficients are calculated for differen t compositions at different ambient temperatures. The activation energy due to the mobility (DeltaU) and diffusion (DeltaQ) mechanisms has been deduce d and the values range from 0.02 to 0.4 eV. The behavior of DeltaW(1), Delt aU and DeltaQ has the same trend with composition, which indicates that the conduction mechanism is controlled by one type of process. The Meyer-Nelde l rule has been applied to our results and a confirmation of this rule has been found.