Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films

Citation
Jy. Lee et al., Annealing characteristics of pulsed laser deposited homoepitaxial SrTiO3 thin films, SURF SCI, 488(3), 2001, pp. 277-285
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
488
Issue
3
Year of publication
2001
Pages
277 - 285
Database
ISI
SICI code
0039-6028(20010810)488:3<277:ACOPLD>2.0.ZU;2-L
Abstract
The homoepitaxial growth of SrTiO3 (STO) films on as-polished STO(1 0 0) su bstrates by pulsed laser deposition has been exploited in detail. The intim ate correlation between the surface step edge density and reflection high-e nergy electron diffraction (RHEED) intensity is clearly demonstrated by mea suring the relation between the initial RHEED intensity drop and laser repe tition rates. Systematic in situ annealing schemes were performed to invest igate the film growth mechanisms. The results indicate that the two or thre e level growth May have occurred during some annealing schemes and can be i nterpreted by Stoyanov's step edge density model. Complementary atomic forc e microscopy investigations of the film surfaces further tend direct suppor t to the RHEED intensity observations. (C) 2001 Elsevier Science B.V. All r ights reserved.