The spectrum of second harmonic radiation reflected from silicon surfaces w
ith incident broad spectral bandwidth, femtosecond laser pulses has been me
asured for several chemical modifications of Si(1 1 1) surfaces. The modifi
cations include surfaces with covalently attached -H and -C10H21 (-decyl) m
onolayers, and a native oxide film. By normalizing the second harmonic spec
trum with a quartz reference, the dispersion of the nonlinear susceptibilit
y of the surfaces has been measured. The normalized spectra show well defin
ed resonances associated with critical point structures in the linear susce
ptibility of silicon, in agreement with previous second harmonic generation
(SHG) studies on oxidized silicon surfaces. It is shown that variations in
peak position and normalized SHG intensity among the spectra are favorable
for the application of SHG for monitoring the progress of surface chemical
reactions. Preliminary results are presented that demonstrate such in situ
monitoring for photoinduced reactions of H-terminated Si(I 1 1) surfaces i
n air and in liquid 1-decene. Estimates have been made of the absolute SHG
efficiency of the chemically modified Si(1 1 1) surfaces. The significance
of the spectroscopic results for the interpretation of the microscopic orig
in of the nonlinear response is considered. Crown Copyright (C) 2001 Publis
hed by Elsevier Science B.V. All rights reserved.