Selective deposition of diamond films on insulators by selective seeding with a double-layer mask

Polycrystalline diamond films have been patterned on Si3N4/Si and SiO2/Si s ubstrates by selective seeding with a double-layer mask via hot-filament ch emical vapor deposition. High quality in the patterned diamond films and hi gh selectivity were obtained by the process. The diamond films deposited on the insulators at different CH4/H-2 concentrations were studied by scannin g electron microscopy and Raman spectroscopy, The process proved to be far less damaging to the substrates, and yet effective in developing patterns o f diamond films on a large and different substrate. (C) 2001 Elsevier Scien ce BN. All rights reserved.