A new process has been employed for preparing diamond coatings on cemented
carbide substrates. Before depositing the diamond coatings, a diffusion bar
rier interlayer was prepared by solid diffusing boron into the substrates a
nd this interlayer has the function of suppressing catalytic effect of Co o
n non-diamond formations. It was confirmed that on cemented carbide substra
tes with Co contents ranging from 3 to 8%, high quality adherent diamond co
atings could be deposited. The formation of the boronized interlayer change
d the catalytic character of the substrate surface and the interlayer funct
ioned as a diffusion barrier layer against outward Co diffusion. The latter
beneficial effect was found to be accompanied by phase transformations in
the interlayer, from one composed of mainly WC, CoW2B2, and CoB phases to t
hat of CoWB, WC and Co2B phases, during the high temperature diamond deposi
tion processes. (C) 2001 Elsevier Science B.V. All rights reserved.