CVD diamond for components and emitters

Citation
J. Davidson et al., CVD diamond for components and emitters, DIAM RELAT, 10(9-10), 2001, pp. 1736-1742
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
9-10
Year of publication
2001
Pages
1736 - 1742
Database
ISI
SICI code
0925-9635(200109/10)10:9-10<1736:CDFCAE>2.0.ZU;2-H
Abstract
An attractive feature of diamond films is their ability to be excellent die lectric (undoped, resistivity > 10(14) Omega cm to > 400 degreesC) or inter esting semiconductors/conductors (doped, resistivity similar to < 1 to 1 K Omega cm). Even as polycrystalline/nanocrystalline films (depending on proc ess deposition conditions), their breakdown strength (as dielectric) and po wer density capability (as resistors) are interestingly large numbers, part icularly for the domain of high temperature, high power applications. The d evelopment of nominally conventional patterning processes to manipulate the diamond films into capacitors, resistors and emitter configurations has le d to an ability to characterize diamond-based components of practical form and function. In this paper characteristics of two of these diamond microel ectronic elements, diamond microresistors and diamond emitters are reported . (C) 2001 Elsevier Science B.V. All rights reserved.