An attractive feature of diamond films is their ability to be excellent die
lectric (undoped, resistivity > 10(14) Omega cm to > 400 degreesC) or inter
esting semiconductors/conductors (doped, resistivity similar to < 1 to 1 K
Omega cm). Even as polycrystalline/nanocrystalline films (depending on proc
ess deposition conditions), their breakdown strength (as dielectric) and po
wer density capability (as resistors) are interestingly large numbers, part
icularly for the domain of high temperature, high power applications. The d
evelopment of nominally conventional patterning processes to manipulate the
diamond films into capacitors, resistors and emitter configurations has le
d to an ability to characterize diamond-based components of practical form
and function. In this paper characteristics of two of these diamond microel
ectronic elements, diamond microresistors and diamond emitters are reported
. (C) 2001 Elsevier Science B.V. All rights reserved.