Electronic properties of carbon nanotubes with pentagon-heptagon pair defects

Authors
Citation
Hf. Hu et al., Electronic properties of carbon nanotubes with pentagon-heptagon pair defects, DIAM RELAT, 10(9-10), 2001, pp. 1818-1823
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
9-10
Year of publication
2001
Pages
1818 - 1823
Database
ISI
SICI code
0925-9635(200109/10)10:9-10<1818:EPOCNW>2.0.ZU;2-H
Abstract
Introduction of a pentagon-heptagon pair defect in the perfect hexagonal ne twork of two carbon nanotubes can change the helicity of the tube and alter its electronic structure. Using a tight binding method to calculate the el ectronic structure of such a system, we show that this pentagon-heptagon pa ir defect in the nanotube structure is not only responsible for the change in nanotube diameter, but also governs the electronic behavior around the F ermi level. This configuration is explored in order to understand the influ ence of the defect on the electronic properties of the system. Topological aspects associated with the presence of the defect are also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.